AS1M025120P Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

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AS1M025120P

Single FETs, MOSFETs

Anbon Semiconductor

N-CHANNEL SILICON CARBIDE POWER

Tube

124

Price:

$34.2270

inventory: 124

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Quantity

Price

Total price

$34.2270

$30.4200

$304.2000

100

$26.6040

$2,660.4000

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product details

AS1M025120P

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

AS1M025120P

Single FETs, MOSFETs

Anbon Semiconductor

N-CHANNEL SILIC

Single FETs, MOSFETs

Tube

124

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Anbon Semiconductor
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Power Dissipation (Max)	463W (Tc)
Vgs(th) (Max) @ Id	4V @ 15mA
Supplier Device Package	TO-247-3
Drive Voltage (Max Rds On, Min Rds On)	20V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 1000 V